TOKYO — Fujitsu Laboratories Inc. and the Tokyo Institute of Technology have developed a technology to form high quality ferroelectric crystal film on silicon, opening the way for a single-chip ...

Geneva and Tokyo, October 30, 2002 – STMicroelectronics (NYSE: STM), a world leader in smart card integrated circuits, and Fujitsu Limited, a world leader in the development and production of FRAM ...

Joining Fujitsu at Interphex will be Verigenics (http://www.verigenics.com), Vizinex RFID (http://www.vizinexrfid.com) and Toppan Printing Co., Ltd. (www.toppan.co.jp ...

TOKYO — Fujitsu Ltd. is making a major bid to push its ferroelectric RAM into mobile broadband multimedia applications. The company has developed an improved FRAM laden with capacitor and process ...

Through a new three-way partnership, Cota® Real Wireless Power™ will be integrated within UHF band radio frequency identification tags (RFID tags) with electronic paper. These "Forever Battery" smart ...

A pair of ferroelectric RAMs (FRAMs), the MB85R1001 and 1002, offer 1-Mbit storage capacity. Developed by Fujitsu Microelectronics, these FRAMs feature high-speed read and write operations (100 and ...

Japanese electronics giant Fujitsu Limited today announced the development of what it calls “the world’s first 64 kilobyte (KB: 66.40, -1.89, -2.76%) ultra-high frequency (UHF)-band RFID tag with high ...

(Phys.org)—An international team of scientists, including University of Nebraska-Lincoln physicist Evgeny Tsymbal, has discovered a new class of materials that could prove to be very useful in ...

A cheap, flexible organic molecule could replace inorganic crystals as the working parts for memory chips, sensors and energy-harvesting systems. (Phys.org)—An international team of scientists, ...

PHOENIX & YOKOHAMA, Japan--(BUSINESS WIRE)--ON Semiconductor Corporation (Nasdaq: ON) and Fujitsu Semiconductor Limited today announced that ON Semiconductor will complete the incremental 20 percent ...

The Tokyo Institute of Technology, Fujitsu Laboratories, and Fujitsu Limited have jointly developed a new material for non-volatile ferroelectric RAM (FeRAM). The material is a modified composition of ...