A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl's best friend. Their groundbreaking research focuses on gallium nitride (GaN) transistors, ...
New power applications are perfect for GaN transistors. They are incredibly efficient, operate at very high speeds, and have compact dimensions. Any electricity project can be built with them with ...
A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...
This article is part of the TechXchange: Gallium Nitride (GaN). Gallium nitride (GaN) continues to gain ground in power electronics. Not only does the technology eliminate reverse recovery, but it ...
BENGALURU: Researchers from the Indian Institute of Science (IISc) have reported a breakthrough in the design of gallium nitride (GaN) power transistors, a development that could help accelerate the ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...
Why Navitas Semiconductor’s GaN solution is unique. Why GaN-based power supplies are smaller and more efficient. Gallium-nitride (GaN) transistors are able to handle large currents at high switching ...
A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results