- Contributing to realization and wide spread of implementation in vertical GaN power devices - GaN devices are attracting attention as next-generation devices that combine high device characteristics ...

TOKYO--(BUSINESS WIRE)-- The QST TM substrate *1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) ...

TOKYO--(BUSINESS WIRE)-- Shin-Etsu Chemical Co., Ltd. (TOKYO: 4063)(Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) has created a 300-mm (12-inch) QSTTM substrate, ...

TOKYO--(BUSINESS WIRE)--Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh) has determined that QST® (Qromis Substrate Technology) substrate*1 is an essential material for ...

KIYOSU, Japan--(BUSINESS WIRE)--Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An article confirming it was published in ...

GaN can be to be combined with silicon to create ICs able to empower 5G communication technology: The RF, mmWave to light semiconductor solutions from 4G to 5G of the MACOM Company (Source: Click here ...

While most HB-LEDs are manufactured using sapphire or SiC substrates, emerging GaN-based device types will require more advanced materials. The worldwide demand for substrates for gallium nitride (GaN ...

GaN (Gallium Nitride) material is a fairly new substrate that is a perfect match for electronic applications that require improved performance especially in terms of high frequency, like the case of ...