Berkeley — Computers may be growing smaller and more powerful, but they require a great deal of energy to operate. The total amount of energy the U.S. dedicates to computing has risen dramatically ...

The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold ...

It has been long known that complementary metal-oxide semiconductor (CMOS) transistors suffer from a scaling issue. As CMOS field-effect transistors (FETs) get smaller, they become less power ...

WEST LAFAYETTE, Ind. – Researchers have experimentally demonstrated how to harness a property called negative capacitance for a new type of transistor that could reduce power consumption, validating a ...