LONDON — LED and high frequency component specialist Cree Inc. (Durham, N.C.) is demonstrating at this week's MTT-S International Microwave Symposium what it suggests is a record efficiency for a ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today it has developed a gallium nitride high-electron mobility transistor (GaN HEMT) power amplifier for C-band ...

Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...

At the 2009 IEEE/MTT-S International Microwave Symposium in Boston, Cree demonstrated its the CGH40120F and CGH40180PP devices the company's latest broadband At the 2009 IEEE/MTT-S International ...

The CMPA0060025F GaN HEMT MMIC power amplifier delivers up to 25W of output power over an instantaneous bandwidth of 20 MHz to 6 GHz, making it suitable for military and ISM applications. Sporting a 0 ...

MD&M West unites five powerful industry sectors—MedTech, Automation, Design & Manufacturing, Plastics, and Packaging—creating the West Coast's most comprehensive manufacturing event.

IIIF provides researchers rich metadata and media viewing options for comparison of works across cultural heritage collections. Visit the IIIF page to learn more. This amplifier is a key electronic ...

Understanding how energy moves in materials is fundamental to the study of quantum phenomena, catalytic reactions, and complex proteins. Measuring how energy moves involves shining special X-ray light ...