The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.
Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the addition of new space screened versions of its popular 650 V, 60 A high reliability gallium nitride high electron mobility ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s. Broader silicon usage stemmed from its improved physical properties ...
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