Four memory modes, one device The study reveals that by tuning experimental parameters such as electrolyte composition, pH, voltage frequency, and channel geometry, the same nanofluidic device can ...
The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
These loop styles correspond to different memory mechanisms, including ion-ion interaction, ion-surface charge adsorption/desorption, surface charge inversion, and ion concentration polarization.
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